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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06MLG, NP82N06NLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06MLG-S18-AY NP82N06NLG-S18-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 50 p/tube
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
* Logic level * Built-in gate protection diode * Super low on-state resistance RDS(on)1 = 7.4 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7 m MAX. (VGS = 5 V, ID = 41 A) * High current rating ID(DC) = 82 A * Low input capacitance Ciss = 5700 pF TYP. * Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Note1 Drain Current (pulse) Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Note2 Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Notes 1. PW 10 s, Duty Cycle 1% 2. Tch 150C, RG = 25 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR 60 20 82 270 143 1.8 175 -55 to +175 37 137 V V A A W W C C A mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.05 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19802EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP82N06MLG, NP82N06NLG
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 41 A VGS = 10 V, ID = 41 A VGS = 5 V, ID = 41 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 41 A, VGS = 10 V, RG = 0
MIN.
TYP.
MAX. 1 10
UNIT
A A
V S
1.5 19 68 5.9 6.7 5700 420 275 28 22 79 9
2.5
Drain to Source On-state Resistance
7.4 9.7 8550 630 500 70 60 160 30 160
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V, VGS = 10 V, ID = 82 A IF = 82 A, VGS = 0 V IF = 82 A, VGS = 0 V, di/dt = 100 A/s
106 29 35 0.9 43 65
1.5
V ns nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D19802EJ1V0DS
NP82N06MLG, NP82N06NLG
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
160
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
PT - Total Power Dissipation - W
140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C
1000
d it e Li m V ) 1i 0 =
ID(pulse)
PW =1
i
ID - Drain Current - A
100
R
n (o DS
)
(V
GS
00
ID(DC)
s
DC
1i m
i
co Se
s
10
w Po D er iss ip io at
1i 0 m
ar y nd Br o ed ak
i
s
1
TC = 25C Single Pulse
d it e im nL
wn d it e Lim
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3C/Wi 10
1 Rth(ch-C) = 1.05C/Wi
0.1
Single Pulse 0.01 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19802EJ1V0DS
3
NP82N06MLG, NP82N06NLG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300 250
FORWARD TRANSFER CHARACTERISTICS
1000 100
ID - Drain Current - A
10 V
VDS = 10 V Pulsed
ID - Drain Current - A
200 VGS = 5 V 150 100 50 Pulsed 0 0 1 2 3 4 5
10 1 0.1 0.01 0.001 0 1 2 3 4 5 TA = 175C 150C 125C 85C 25C -25C -55C
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175 225 Tch - Channel Temperature - C
100 TA = -55C -25C 25C 75C 125C
10
150C 175C
VDS = VGS ID = 250 A
VDS = 5 V Pulsed 1 0.1 1 10 100 1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - m
20 16 12 8 4 0 0.1 1 10 100 1000 VGS = 5 V 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
30 Pulsed
20
ID = 82 A 41 A 16.4 A
10
0 0 4 8 12 16 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D19802EJ1V0DS
NP82N06MLG, NP82N06NLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
Ciss, Coss, Crss - Capacitance - pF
10000 Ciss
16 12 8 10 V 4 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C
VGS = 5 V
1000
Coss
ID = 41 A Pulsed
VGS = 0 V f = 1 MHz 100 0.1 1
Crss
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 50 40 30 20 10 0 VDS ID = 82 A 0 20 40 60 80 100 0 120 VDD = 48 V 30 V 12 V 12 10 8 6 4 2
VGS - Gate to Source Voltage - V
100
td(off) td(on)
10 VDD = 30 V VGS = 10 V RG = 0 1 0.1 1 10
tr tf
VGS
100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 100 10 V 5V 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5 10 1 VGS = 0 V
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
di/dt = 100 A/s VGS = 0 V 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D19802EJ1V0DS
5
NP82N06MLG, NP82N06NLG
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K)
3.80.2
TO-262 (MP-25SK)
4.450.2 1.30.2
1.20.3
10.00.2
2.80.3
10.00.2
4.450.2 1.30.2
10.10.3
15.9 MAX.
6.30.3
4 1
3.10.2 13.70.3
4 1
13.70.3
2
3
1.270.2 0.80.1
1.270.2 0.80.1
3.10.3
2
3
8.90.2
0.50.2 2.54 TYP. 2.54 TYP.
2.50.2
0.50.2 2.54 TYP. 2.54 TYP.
2.50.2
1. Gate 2. Drain 3. Source 4. Fin (Drain)
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D19802EJ1V0DS
NP82N06MLG, NP82N06NLG
MARKING INFORMATION
NEC 82N06 LG
Pb-free plating marking Abbreviation of part number Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Wave soldering NP82N06MLG, NP82N06NLG Partial heating NP82N06MLG, NP82N06NLG
Soldering Conditions Maximum temperature (Solder temperature): 260C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended Condition Symbol THDWS
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19802EJ1V0DS
7
NP82N06MLG, NP82N06NLG
* The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E0904E

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